DocumentCode :
2922070
Title :
Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)
Author :
Benar, Christelle ; Ogier, Jean-Luc ; Goguenheim, Didier
Author_Institution :
ST Microelectron., Zone Ind. Rousset, Rousset
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
7
Lastpage :
11
Abstract :
NBTI degradation is known to generate defects which can partially recover during a fast interruption. This paper investigates the hole de-trapping effect but also re-trapping kinetics and re-passivation of interface states. The comparison of relaxation at low and high temperatures allows us to conclude that the annealing at 300degC is a real recovery and healing of oxide defects. Indeed, interface states are totally re-passivated and hole traps are de-trapped but have also totally recovered. Furthermore, we show that the retrapping time of oxide traps is three times longer than their generation whatever the stress conditions and relaxation times.
Keywords :
annealing; hole traps; interface states; passivation; semiconductor device reliability; annealing; hole detrapping effect; interface states; negative bias temperature instability; oxide defect recovery; relaxation time; stress conditions; temperature 300 degC; Degradation; Hydrogen; Interface states; Low voltage; MOSFET circuits; Microelectronics; Negative bias temperature instability; Niobium compounds; Stress; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796075
Filename :
4796075
Link To Document :
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