Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing

Author

Lee, Fourmun ; Marcus, Steve ; Shero, Eric ; Wilk, Glen ; Swerts, Johan ; Maes, Jan Willem ; Blomberg, Tom ; Delabie, Annelies ; Gros-Jean, Mickael ; Deloffre, Emilie

Author_Institution

ASM America Inc., Phoenix

fYear

2007

fDate

11-12 June 2007

Firstpage

359

Lastpage

365

Abstract

Atomic layer deposition (ALD) recently emerged as an enabling technology for microelectronic device fabrication. This technique provides the unique capability to deposit ultra thin films with the thickness control, uniformity, step coverage, and electrical/mechanical properties required to support device manufacturing at the 45 nm node and beyond. This paper will review the fundamentals of ALD processing and describe the equipment used. Applications of ALD in the fabrication of advanced gate stacks, on-chip capacitors, and thin film magnetic heads are presented.

Keywords

DRAM chips; atomic layer deposition; capacitors; magnetic heads; nanoelectronics; semiconductor device manufacture; thin film devices; ALD processing; DRAM stack capacitors; atomic layer deposition technology; electrical properties; gate stack deposition; mechanical properties; microelectronic device manufacturing; planar capacitor fabrication; size 45 nm; thin film magnetic heads; ultra thin film deposition; Atomic layer deposition; Capacitors; Fabrication; Magnetic films; Manufacturing; Mechanical factors; Microelectronics; Sputtering; Thickness control; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI

Conference_Location

Stresa

Print_ISBN

1-4244-0652-8

Electronic_ISBN

1-4244-0653-6

Type

conf

DOI

10.1109/ASMC.2007.375064

Filename

4259230