A 90-nm CMOS resistor-free compact trimmable voltage reference for ultra-low power low cost applications

Author

Samir, A. ; Kussener, E. ; Rahajandraibe, W. ; Girardeau, L. ; Bert, Y. ; Barthélemy, H.

Author_Institution

STMicroelectron., Rousset, France

fYear

2011

fDate

11-14 Dec. 2011

Firstpage

661

Lastpage

664

Abstract

A low power voltage reference generator operating with a supply voltage ranging from 1.6V to 3.6V has been implemented in a 90-nm standard CMOS process. The reference is based on MOSFETs that are biased in the weak inversion region to consume nanowatts of power and uses no resistors. The maximum supply current at 3.6V and at 125°C is 173nA. It provides an 771mV voltage reference. A temperature coefficient of 7.5ppm/°C is achieved at best and 39.5ppm/°C on average, in a range from -40 to 125°C, as the combined effect of a suppression of the temperature dependence of mobility and the compensation of the threshold voltage temperature variation. The total block area is 0.03mm².

Keywords

CMOS integrated circuits; MOSFET; compensation; low-power electronics; reference circuits; CMOS resistor-free voltage reference; MOSFET; compact trimmable voltage reference; compensation; size 90 nm; standard CMOS process; threshold voltage temperature variation; ultra-low power low cost applications; voltage 1.6 V to 3.6 V; voltage reference generator; CMOS integrated circuits; Generators; Temperature dependence; Temperature distribution; Temperature measurement; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4577-1845-8

Electronic_ISBN

978-1-4577-1844-1

Type

conf

DOI

10.1109/ICECS.2011.6122361

Filename

6122361