DocumentCode :
2922172
Title :
Charge trapping/detrapping and dielectric breakdown in SiO/sub 2//Si/sub 3/N/sub 4//SiO/sub 2/ stacked layers on rugged poly-Si under dynamic stress
Author :
Lo, G.Q. ; Ito, S. ; Kwong, D.L. ; Mathews, V.K. ; Fazan, P.C. ; Ditali, A.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear :
1992
fDate :
March 31 1992-April 2 1992
Firstpage :
42
Lastpage :
48
Abstract :
The authors report a study on charge trapping/detrapping and dielectric breakdown of ultrathin reoxidized Si/sub 3/N/sub 4/ stacked layers on rugged poly-Si under dynamic stress. It was found that the dielectric time-to-breakdown (t/sub BD/) in capacitors with rugged poly-Si under dynamic stress increases with increasing frequency, whereas t/sub BD/ in capacitors with smooth poly-Si decreases with frequency. Charge trapping/detrapping has been studied by monitoring the current-voltage characteristic before and after stress. Results show that for capacitors with rugged poly-Si, hole trapping dominates during electron injection from the top electrode, whereas electron trapping dominates during injection from the bottom electrode. Hole trapping dominates for both polarity injections in capacitors with smooth poly-Si. A dynamic stress-induced breakdown model based on charge trapping/detrapping is proposed.<>
Keywords :
dielectric thin films; electric breakdown of solids; electron traps; hole traps; semiconductor process modelling; semiconductor-insulator boundaries; silicon compounds; Si; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ stacked layers; capacitors; charge detrapping; current-voltage characteristic; dielectric breakdown; dielectric time-to-breakdown; dynamic stress; electron injection; electron trapping; hole trapping; model; rugged polysilicon; ultrathin reoxidized Si/sub 3/N/sub 4/ stacked layers; Capacitors; Charge carrier processes; Current-voltage characteristics; Dielectric breakdown; Electric breakdown; Electrodes; Electron traps; Frequency; Monitoring; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
Type :
conf
DOI :
10.1109/RELPHY.1992.187620
Filename :
187620
Link To Document :
بازگشت