TDDB on poly-gate single doping type capacitors

Author

Wang, Shoue-Jen ; Chen, Ih-Chin ; Tigelaar, Howard L.

Author_Institution

Texas Instruments, Dallas, TX, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

54

Lastpage

57

Abstract

Lifetime projections for polycrystalline silicon (poly) gate single doping type capacitors are complicated by gate poly depletion and inversion during the accelerated test. The presence of poly depletion and inversion was experimentally confirmed by CV and IV measurements. Simple high field straight line extrapolation was found to overestimate the 5-V lifetime by 1200 times in the 68-AA oxide equivalent poly/poly capacitors. The overestimate can be minimized by limiting the test voltage below the gate poly inversion voltage. A sensitivity analysis of the overestimate to gate poly doping is also presented.<>

Keywords

doping profiles; electric breakdown of solids; elemental semiconductors; life testing; metal-insulator-semiconductor devices; semiconductor device testing; semiconductor-insulator boundaries; sensitivity analysis; silicon; C-V characteristics; I-V characteristics; Si-SiO/sub 2/-Si/sub 3/N/sub 4/-Al; TDDB; accelerated test; gate poly depletion; gate poly inversion; high field straight line extrapolation; lifetime projections; polysilicon gate single doping type capacitors; sensitivity analysis; Capacitance; Capacitors; Dielectrics; Electrical resistance measurement; Electrodes; Life estimation; Life testing; Semiconductor device doping; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187622

Filename

187622