Hot carrier induced HFE degradation in BiCMOS transistors

Author

Varker, C.J. ; Pettengill, D. ; Shiau, Wei-Tsun ; Reuss, B.

Author_Institution

Adv. Technol. Center, Mesa, AZ, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

58

Lastpage

62

Abstract

Experimental results are presented of an investigation designed to develop an understanding of the physical mechanisms and the process inputs causing reduced hot carrier reliability in BiCMOS npn transistors. The overall objective is to correlate and extract information on process module and device design during product development and to develop reliability-driven rules which can be used to reduce hot carrier degradation of the forward current gain and to improve overall transistor reliability. The results show the effects of the intrinsic base implant dose and energy as well as thermal history on hot-carrier-induced forward-current-gain degradation in BiCMOS npn transistors.<>

Keywords

BiCMOS integrated circuits; bipolar transistors; hot carriers; reliability; semiconductor device testing; BiCMOS n-p-n transistors; device design; forward current gain; hot carrier degradation; hot carrier reliability; intrinsic base implant dose; process module design; thermal history; transistor reliability; BiCMOS integrated circuits; Degradation; Hot carriers; Packaging; Semiconductor device testing; Stress; System testing; Transistors; Voltage; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187623

Filename

187623