Title :
High performance 4:1 multiplexer with ambipolar double-gate FETs
Author :
Jabeur, K. ; O´Connor, I. ; Yakymets, N. ; Beux, S. Le
Author_Institution :
Lyon Inst. of Nanotechnol., Univ. of Lyon, Ecully, France
Abstract :
In this paper, we exploit the ambipolarity property of double gate devices such as DG-CNTFETs to design a new 4:1 multiplexer, with a significant reduction in circuit complexity with respect to conventional CMOS-based multiplexers for equivalent functionality. Based on Pass-Transistor Logic, it demonstrates performance improvement of up to 3× concerning Power-Delay-Product reduction, as compared to conventional multiplexers, and an area reduction of at least 2× compared to any 4:1 multiplexer, and up to 3× when compared to a static-logic design.
Keywords :
CMOS integrated circuits; carbon nanotube field effect transistors; logic gates; CMOS-based multiplexers; DG-CNTFET; ambipolar double-gate FET; ambipolarity property; circuit complexity; double gate devices; equivalent functionality; high performance multiplexer; pass-transistor logic; power-delay-product reduction; CNTFETs; Delay; Field programmable gate arrays; Logic gates; Multiplexing; Power demand; CNTFETs; advanced technologies; ambipolar double-gate devices; multiplexers; pass transistor logic; static logic;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
DOI :
10.1109/ICECS.2011.6122365
