Comparison of High-frequency Noise Correlation Models in SiGe HBTs

Author

Sha, Yong-Ping ; Zhang, Wan-Rong ; Xie, Hong-Yun

Author_Institution

Beijing Univ. of Technol., Beijing

fYear

2007

fDate

9-11 Dec. 2007

Firstpage

202

Lastpage

205

Abstract

Considering the noise correlation term between collector and base current shot noise, there mainly are four noise parameter models of SiGe HBTs, including the unified noise model (UNI), two SPICE noise models (SPN1, SPN2), the thermodynamic noise model (TDN). A comparison of these models was investigated in this work. A SiGe HBT based on BiCMOS process was fabricated and its S-parameters and Minimum Noise Figure were tested. Through the comparison between the measurement and the simulation results from these models, two of the models, the UNI and the SPN2, were obviously in good agreement with the measured results at high-frequency.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; S-parameters; bipolar integrated circuits; heterojunction bipolar transistors; semiconductor device noise; BiCMOS process; HF amplifiers; SPICE noise model; SiGe HBT; heterojunction bipolar transistors; high-frequency noise correlation models; minimum noise figure; s-parameters; thermodynamic noise model; unified noise model; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Integrated circuit noise; Low-frequency noise; Radio frequency; SPICE; Semiconductor device noise; Silicon germanium; Thermodynamics; Correlation; HF amplifiers; Heterojunction bipolar transistors; Noise; Silicon; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on

Conference_Location

Rasa Sentosa Resort

Print_ISBN

978-1-4244-1307-2

Electronic_ISBN

978-1-4244-1308-9

Type

conf

DOI

10.1109/RFIT.2007.4443951

Filename

4443951