DocumentCode :
2922275
Title :
Advances in traveling-wave electroabsorption modulators for analog applications
Author :
Yu, P.K.L. ; Chang, W.S.C. ; Zhuang, Y. ; Li, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
Volume :
2
fYear :
2002
fDate :
10-14 Nov. 2002
Firstpage :
540
Abstract :
We review the design and fabrication of the traveling wave (TW) electrode for the EAM for high speed and high power operation. In one approach, EAMs with improved saturation properties have been demonstrated via the lowering of the hole barrier by applying appropriate strain at the well/barrier interface. An alternate approach to enhance the saturation power of the quantum well modulator is via the use of a barrier step inside the well to suppress the onset of the red shift in the quantum-confined Stark effect to a higher electric field. In these approaches, however, the saturation power is optimized without incorporating the modulation frequency considerations.
Keywords :
electro-optical modulation; electroabsorption; electrodes; quantum confined Stark effect; quantum well devices; analog applications; barrier step; design; fabrication; high power operation; high speed; higher electric field; hole barrier lowering; modulation frequency; quantum well modulator; quantum-confined Stark effect; red shift; saturation power; traveling wave electrode; traveling-wave electroabsorption modulators; well/barrier interface; Application software; Electrodes; High speed optical techniques; Optical attenuators; Optical design; Optical modulation; Optical saturation; Optical waveguides; Propagation losses; Quantum well devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7500-9
Type :
conf
DOI :
10.1109/LEOS.2002.1159420
Filename :
1159420
Link To Document :
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