Title :
Mismatch drift: a reliability issue for analog MOS circuits
Author :
Michael, Christopher ; Wang, Hai ; Teng, C.S. ; Shibley, James ; Lewicki, Larry ; Shyu, Chin-Miin ; Lahri, Rajeeva
Author_Institution :
National Semiconductor Corp., Santa Clara, CA, USA
fDate :
March 31 1992-April 2 1992
Abstract :
Mismatch drift is a major process reliability issue for analog and mixed-signal designs. Mismatch stability was examined for a 0.8- mu m CMOS process using a cascode current minor test circuit. After 1000-h burn-in at 125 degrees C under matched gate voltage stress, no drift in parameter matching was measured. However, for the same burn-in conditions with unmatched gate voltage stress, drifts in threshold voltage mismatch of 0.3 mV for n-channel and 2.4 mV for p-channel transistor pairs have been observed. This mismatch drift is larger for short-channel devices, indicating that the drift-causing phenomenon is greater at the drain/source edge.<>
Keywords :
CMOS integrated circuits; amplifiers; circuit reliability; integrated circuit testing; linear integrated circuits; 0.8 micron; 1000 h; 125 degC; analog MOS circuits; burn-in; cascode current minor test circuit; matched gate voltage stress; mismatch drift; mixed-signal designs; n-channel transistor pairs; p-channel transistor pairs; reliability; short-channel devices; threshold voltage mismatch; unmatched gate voltage stress; Analog circuits; CMOS process; Circuit stability; Circuit testing; Degradation; Digital circuits; Integrated circuit reliability; Mirrors; Stress measurement; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187627
