Mobility coupling effects due to remote Coulomb scattering in thin-film FD-SOI CMOS devices

Author

Bennamane, K. ; Ben Akkez, I. ; Cros, A. ; Fenouillet-Beranger, C. ; Balestra, F. ; Ghibaudo, Gerard

Author_Institution

IMEP-LAHC Lab., Minatec-INPG, Grenoble, France

Volume

49

Issue

7

fYear

2013

fDate

March 28 2013

Firstpage

490

Lastpage

492

Abstract

Mobility coupling effects due to remote Coulomb scattering (RCS) are demonstrated for the first time in FD-SOI CMOS devices subjected to front and back interface electrical degradation. The evolution with stress time of the front and back threshold voltages as well as of the low field mobility values has been obtained. The front and back interface mobility degradations were then correlated to the stress induced interfacial charge variations for each stressed interface. This enabled the clear demonstration of the existence of mobility coupling effects between the front and back interface by RCS through the silicon film.

Keywords

CMOS integrated circuits; MOSFET; carrier mobility; semiconductor thin films; silicon; silicon-on-insulator; RCS; back interface electrical degradation; back interface mobility degradations; back threshold voltages; front interface electrical degradation; front interface mobility degradations; front threshold voltages; low field mobility values; mobility coupling effects; mosfet; remote Coulomb scattering; silicon film; stress induced interfacial charge variations; stress time; stressed interface; thin-film FD-SOI CMOS devices;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.4150

Filename

6504981