Novel Process Control by Measurement of Silicon Lattice Damage

In this work, a novel SPC monitor of RTP temperature was developed where measurements are made directly on product. This technique significantly reduces test wafer costs while allowing real-time determination of functionality directly on the area of interest. The technique is useful over the entire operational range of the tool temperatures. However, in this latter cases reusable test wafers are needed since lower temperatures do not fully activate the implants.