Pipeline defects in CMOS MOSFET devices caused by SWAMI isolation

Author

Wang, CT ; Haddad, Homayoon ; Berndt, Paul ; Yeh, Bao-Sun ; Connors, Bill

Author_Institution

Hewlett-Packard, Corvallis, OR, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

85

Lastpage

90

Abstract

A pipeline defect which became a leakage path between source and drain in an n-channel MOSFET was identified. It was found that a 20-second Wright-etch will clearly delineate the pipe. The cause of the pipeline was the improper SWAMI (side wall masked isolation) etch which generated stress at the island corners. This stress generated high density dislocation lines which made vacancies readily available for enhanced phosphorus diffusion.<>

Keywords

CMOS integrated circuits; etching; insulated gate field effect transistors; integrated circuit technology; semiconductor device testing; vacancy-dislocation interactions; CMOS MOSFET devices; SWAMI isolation; Wright-etch; high density dislocation lines; island corners; leakage path; n-channel MOSFET; pipeline defect; side wall masked isolation; stress generation; vacancies; Bipolar integrated circuits; CMOS process; CMOS technology; FETs; MOSFET circuits; Pipelines; Read-write memory; Semiconductor device modeling; Silicon; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187628

Filename

187628