Title :
Defect-free shallow P/N junction by point defect engineering
Author :
Onishi, Shigeo ; Ayukawa, Akitsu ; Uda, Keiichiro ; Sakiyama, Keizo
Author_Institution :
Sharp Corp., Nara, Japan
fDate :
March 31 1992-April 2 1992
Abstract :
By taking advantage of high-stress SiN/sub x/ film as a source of vacancies, a defect-free shallow junction technology was developed by point defect engineering. By depositing the SiN/sub x/ film with high stress (1*10/sup 10/ dyn/cm/sup 2/) and annealing the sample, the vacancies were supplied from the SiN/sub x/-Si interface into the Si substrate to relax the stress of the SiN/sub x/ film and react with the extrinsic defect due to implantation. The density of the defects was then one order of magnitude lower than the sample without the SiN/sub x/ film. This technology is also useful for reducing the diffusion of dopant, which is controlled by the interstitial Si atoms. It was confirmed that the dopant profile of B+ was also shallower by about 10%.<>
Keywords :
annealing; doping profiles; impurity-vacancy interactions; insulated gate field effect transistors; ion implantation; metal-insulator-semiconductor devices; p-n homojunctions; vacancy-dislocation interactions; MOS devices; Si substrate; Si:BF/sub 2//sup +/; SiN/sub x/-Si interface; annealing; defect-free shallow junction technology; dopant diffusion reduction; dopant profile; extrinsic defect; high stress film; implantation; interstitial Si atoms; p-n junction; point defect engineering; vacancies; Annealing; Atomic layer deposition; Crystallization; Leakage current; Semiconductor films; Silicon; Stacking; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187631
