DocumentCode :
2922410
Title :
Backside Wafer Damage Induced Wafer Front Side Defect and Yield Impact
Author :
Wang, Neng-Cheng ; Chang, Hui-An ; Chang, Chung-I ; Wang, Tings
Author_Institution :
ProMOS Technol. Inc. Production Technol. Div., Hsinchu
fYear :
2007
fDate :
11-12 June 2007
Firstpage :
58
Lastpage :
60
Abstract :
The article describes the wafer yield loss due to wafer backside defect. The backside defect pattern will transfer to the next wafer surface during the following clean process and cause the process defect issue. These defects will impact the yield. Real root cause finding let prevent action work well.
Keywords :
inspection; integrated circuit yield; surface cleaning; wafer-scale integration; backside wafer damage; clean process; wafer front side defect; wafer yield loss; Cooling; Etching; Inspection; Light scattering; Particle scattering; Production; Size control; Surface cleaning; Testing; US Department of Energy; Dark field inspection; FIB; SEM; TEM; backside inspection tool; dual beam review station; e-beam inspection; wafer backside damage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
Type :
conf
DOI :
10.1109/ASMC.2007.375081
Filename :
4259247
Link To Document :
بازگشت