Title :
Backside Wafer Damage Induced Wafer Front Side Defect and Yield Impact
Author :
Wang, Neng-Cheng ; Chang, Hui-An ; Chang, Chung-I ; Wang, Tings
Author_Institution :
ProMOS Technol. Inc. Production Technol. Div., Hsinchu
Abstract :
The article describes the wafer yield loss due to wafer backside defect. The backside defect pattern will transfer to the next wafer surface during the following clean process and cause the process defect issue. These defects will impact the yield. Real root cause finding let prevent action work well.
Keywords :
inspection; integrated circuit yield; surface cleaning; wafer-scale integration; backside wafer damage; clean process; wafer front side defect; wafer yield loss; Cooling; Etching; Inspection; Light scattering; Particle scattering; Production; Size control; Surface cleaning; Testing; US Department of Energy; Dark field inspection; FIB; SEM; TEM; backside inspection tool; dual beam review station; e-beam inspection; wafer backside damage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
DOI :
10.1109/ASMC.2007.375081
