DocumentCode :
2922411
Title :
Lumped Element Coplanar-Microstrip-Transition Model for Si-RFICs up to 90 GHz
Author :
Gruner, Daniel ; Zhang, Zihui ; Korndoerfer, Falk ; Boeck, Georg
Author_Institution :
Berlin Univ. of Technol., Berlin
fYear :
2007
fDate :
9-11 Dec. 2007
Firstpage :
236
Lastpage :
239
Abstract :
The development of a lumped element model for monolithic integrated transitions from coplanar probe pads to microstrip line structures is presented for a frequency range up to 90 GHz. Several passive test structures have been fabricated in a five metal layer SiGe BiCMOS process technology. The values of the lumped elements are determined based on measurements and are tabulated in this work. In order to verify the performance of the proposed transition model, comparisons with measurements of known structures are carried out.
Keywords :
BiCMOS integrated circuits; MIMIC; microstrip lines; BiCMOS process technology; EM simulation; MIMIC; Si-RFIC; SiGe; coplanar probe pads; lumped element coplanar-microstrip-transition model; microstrip line structures; monolithic integrated transitions; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Integrated circuit measurements; Microstrip; Microwave technology; Probes; Silicon germanium; Strips; Testing; EM simulation; Microstrip transitions; integrated circuit modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on
Conference_Location :
Rasa Sentosa Resort
Print_ISBN :
978-1-4244-1307-2
Electronic_ISBN :
978-1-4244-1308-9
Type :
conf
DOI :
10.1109/RFIT.2007.4443958
Filename :
4443958
Link To Document :
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