Title :
III-V materials growth by hydride VPE for high frequency optoelectronic devices
Author :
Lourdudoss, Sebartian ; Kjebon, Olle ; Sun, Yan-Ting ; Schatz, Richard ; Söderström, David ; Barrios, C.A. ; Messmer, Egbert Rodriguez
Author_Institution :
R. Inst. of Technol., Kista, Sweden
Abstract :
Hydride vapour phase epitaxy is flexible for fabricating buried heterostructure lasers yielding high bandwidth. Its potential for long and short wavelength lasers based on the emerging materials systems GaAs/GaInAs(N)(Sb) and GaAs/AlGaAs, respectively is highlighted. In-situ mesa etching cum immediate regrowth and heteroepitaxy of InP on silicon are additional facilities offered by HVPE.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; etching; gallium arsenide; indium compounds; optical materials; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; DFB; GaAlAs-GaInAs-GaAs; GaAs-AlGaAs; GaInAs-GaAlAs-AlAs-GaAs; GaInAsP-InP; GaInP-GaInAsP-GaAs; III-V materials growth; InAlGaAs-InGaAs-InP; InP:Fe; Si; VCSEL; buried heterostructure lasers; heteroepitaxy; high bandwidth; high frequency optoelectronic devices; hydride VPE; hydride vapour phase epitaxy; immediate regrowth; in-situ mesa etching; long wavelength lasers; short wavelength lasers; Bandwidth; Epitaxial growth; Etching; Frequency; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Optical materials; Optoelectronic devices; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159427
