Title :
Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect
Author :
Watanabe, Atsushi ; Fujimoto, Kazuhisa ; Oda, Mayumi ; Nakatsuka, Tadayoshi ; Tamura, Akiyoshi
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
fDate :
March 31 1992-April 2 1992
Abstract :
Rapid degradation of GaAs self-aligned gate MESFETs (SAGFETs) by hot carriers was observed. The degradation rate was found to depend on the type of passivation film on the GaAs surface. SAGFETs with SiN passivation were found to have higher resistance to degradation than SAGFETs with SiO/sub 2/ passivation. The results suggest that the interface between the GaAs surface and the passivation film must be considered in any model for the degradation mechanism.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hot carriers; passivation; semiconductor device testing; GaAs surface; GaAs-SiN; GaAs-SiO/sub 2/; SAGFETs; WSi; degradation rate; hot carrier degradation; passivation film; rapid degradation; self-aligned gate MESFETs; Degradation; Digital integrated circuits; FETs; Gallium arsenide; Hot carrier effects; MESFETs; Passivation; Silicon compounds; Stress; Testing;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187636
