Title :
Reliability Guard Band Reduction by Differential Targeting of pMOS Gate Oxide Thickness
Author :
Geilenkeuser, R. ; Wieczorek, K. ; Trentzsch, M. ; Graetsch, F. ; Bayha, B. ; Samohvalov, V. ; Paetzold, T. ; Schink, T.
Author_Institution :
AMD Fab 36 LLC & Co. KG, Dresden
Abstract :
In the presented work we demonstrate an efficient way to improve the balance between performance and reliability in the case that microprocessor speed is limited by a pMOS dominated speed path. It is shown that with differential targeted, thicker pMOS gate oxide thickness (TOX), realized by the selective control of nMOS and pMOS GOX, pMOS degradation in terms of HCI and NBTI can be effectively reduced at tolerable loss of initial product frequency. Fast Wafer Level Reliability (fWLR) techniques are used as an effective tool to quickly characterize the thickness dependence of the degradation components. Product wearout experiments confirm that less product frequency degradation is observed with a thicker P-TOX, which is in agreement with the degradation of ringoscillator frequency as well, stressed in parallel to the product.
Keywords :
MOS integrated circuits; integrated circuit reliability; GOX; P-TOX; fast wafer level reliability techniques; hot carrier injection; microprocessor speed; nMOS; negative bias temperature instability degradation; pMOS gate oxide thickness; reliability guard band reduction; ring oscillator frequency; Degradation; Frequency; Human computer interaction; MOS devices; Microprocessors; Niobium compounds; Stress; Testing; Titanium compounds; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796096