Role of hydrogen at poly-Si/SiO/sub 2/ interface in trap generation by substrate hot-electron injection

Author

Yoshii, I. ; Hama, K. ; Hashimoto, K.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

136

Lastpage

140

Abstract

The authors investigated trap generation by substrate hot-electron injection for MOS devices in which hydrogen was intentionally incorporated by forming gas anneal. It was found that the high-temperature forming gas anneal significantly enhances both interface and oxide trap generation at oxide fields during injection above 4 MV/cm, while no enhancement has been observed below 3 MV/cm. It was also found from secondary ion mass spectroscopy (SIMS) measurements that the forming gas anneal increases the hydrogen concentration at the poly-Si/SiO/sub 2/ interface but not in the gate oxide nor at the SiO/sub 2//Si interface. Based on these experimental results, a novel trap generation model, in which hydrogen released from Si-H at the poly-Si/SiO/sub 2/ interface by hot electrons causes the enhanced trap generation, is proposed.<>

Keywords

annealing; electron traps; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; H/sub 2/ release; H/sub 2/ role; MOS devices; SIMS; experimental results; forming gas anneal; model; polycrystalline Si-SiO/sub 2/; secondary ion mass spectroscopy; substrate hot-electron injection; trap generation; Annealing; CMOS technology; Character generation; Electron traps; Fabrication; Hydrogen; Nitrogen; Secondary generated hot electron injection; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187638

Filename

187638