Title :
Aluminum-free active region high-power laser diodes
Author :
Salokatve, A. ; Nightingale, J.L.
Author_Institution :
Coherent Semicond. Group, Tampere, Finland
Abstract :
Summary form only given. Use of aluminum-free epitaxial structures for near-infrared laser diodes has been an active research area in the past decade. These edge-emitting laser diodes have demonstrated operational lifetimes exceeding 10,000 hours at high output powers and high efficiencies. Improvements both in epitaxial structure and in thermal management have enabled these results.
Keywords :
laser beams; laser reliability; semiconductor device reliability; semiconductor epitaxial layers; semiconductor lasers; waveguide lasers; 10000 h; Al-free active region; Al-free active region high-power laser diodes; active research area; edge-emitting laser diodes; epitaxial structure; epitaxial structures; high efficiencies; high output powers; high-power laser diodes; laser diodes; near-infrared laser diodes; operational lifetimes; thermal management; Bars; Diode lasers; Laser beams; Lenses; Optical arrays; Optical design; Optical pulses; Packaging; Phased arrays; Semiconductor laser arrays;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906963
