Defect recognition via longitudinal mode analysis of high power broad area QW semiconductor lasers

Author

Klehr, A. ; Beister, G. ; Erbert, G. ; Klein, A. ; Knauer, A. ; Maege, J. ; Rechenberg, I. ; Ressel, P. ; Sebastian, J. ; Wenzel, H. ; Trankle, G.

Author_Institution

Ferdinand Braun Inst. fur Hochstfrequenztech., Berlin, Germany

fYear

2000

fDate

7-12 May 2000

Firstpage

243

Abstract

Summary form only given. The lifetime of semiconductor quantum well (QW) lasers is limited by the formation of defects at the facets or in the bulk of the active region. Usually long time aging tests combined with special physical investigations are used to analyze the quality of manufactured lasers. Here, a physical method is presented which allows the precise detection of defects in broad area Fabry-Perot lasers. This method bases on the analysis of longitudinal mode spectra measured below threshold.

Keywords

ageing; laser modes; optical testing; quantum well lasers; semiconductor device testing; active region; below threshold; broad area Fabry-Perot lasers; defect recognition; high power broad area QW semiconductor lasers; long time aging tests; longitudinal mode analysis; longitudinal mode spectra; semiconductor quantum well laser lifetime; Gallium nitride; Laser modes; Power lasers; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906965

Filename

906965