DocumentCode :
2922623
Title :
Reliability Simulation and Design Consideration of High Speed ADC Circuits
Author :
Yan, Baoguang ; Qin, Jin ; Dai, Jun ; Fan, Qingguo ; Bernstein, Joseph B.
Author_Institution :
Reliability Eng., Univ. of Maryland, College Park, MD
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
125
Lastpage :
128
Abstract :
For the first time, a high speed flash ADC is developed for reliability analysis and simulation of analogue and mix-signal circuit. All the three failure mechanisms (NBTI, HCI, TDDB) are quantified with degradation models. The result shows that pMOS degradation especially NBTI is the most detrimental failure mechanism for the normal operation of high speed ADC, which leads to the fault output. Based on the analysis of the reliability-critical parts, reliability improvement approaches are suggested for the reliable design.
Keywords :
analogue-digital conversion; integrated circuit reliability; mixed analogue-digital integrated circuits; NBTI degradation; analog-digital converters; mixed-signal circuit; negative bias temperature instability; pMOS degradation; reliability analysis; Analytical models; CMOS technology; Circuit simulation; Degradation; Failure analysis; Human computer interaction; MOSFETs; Niobium compounds; Titanium compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796102
Filename :
4796102
Link To Document :
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