DocumentCode
2922623
Title
Reliability Simulation and Design Consideration of High Speed ADC Circuits
Author
Yan, Baoguang ; Qin, Jin ; Dai, Jun ; Fan, Qingguo ; Bernstein, Joseph B.
Author_Institution
Reliability Eng., Univ. of Maryland, College Park, MD
fYear
2008
fDate
12-16 Oct. 2008
Firstpage
125
Lastpage
128
Abstract
For the first time, a high speed flash ADC is developed for reliability analysis and simulation of analogue and mix-signal circuit. All the three failure mechanisms (NBTI, HCI, TDDB) are quantified with degradation models. The result shows that pMOS degradation especially NBTI is the most detrimental failure mechanism for the normal operation of high speed ADC, which leads to the fault output. Based on the analysis of the reliability-critical parts, reliability improvement approaches are suggested for the reliable design.
Keywords
analogue-digital conversion; integrated circuit reliability; mixed analogue-digital integrated circuits; NBTI degradation; analog-digital converters; mixed-signal circuit; negative bias temperature instability; pMOS degradation; reliability analysis; Analytical models; CMOS technology; Circuit simulation; Degradation; Failure analysis; Human computer interaction; MOSFETs; Niobium compounds; Titanium compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location
S. Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-2194-7
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2008.4796102
Filename
4796102
Link To Document