• DocumentCode
    2922623
  • Title

    Reliability Simulation and Design Consideration of High Speed ADC Circuits

  • Author

    Yan, Baoguang ; Qin, Jin ; Dai, Jun ; Fan, Qingguo ; Bernstein, Joseph B.

  • Author_Institution
    Reliability Eng., Univ. of Maryland, College Park, MD
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    For the first time, a high speed flash ADC is developed for reliability analysis and simulation of analogue and mix-signal circuit. All the three failure mechanisms (NBTI, HCI, TDDB) are quantified with degradation models. The result shows that pMOS degradation especially NBTI is the most detrimental failure mechanism for the normal operation of high speed ADC, which leads to the fault output. Based on the analysis of the reliability-critical parts, reliability improvement approaches are suggested for the reliable design.
  • Keywords
    analogue-digital conversion; integrated circuit reliability; mixed analogue-digital integrated circuits; NBTI degradation; analog-digital converters; mixed-signal circuit; negative bias temperature instability; pMOS degradation; reliability analysis; Analytical models; CMOS technology; Circuit simulation; Degradation; Failure analysis; Human computer interaction; MOSFETs; Niobium compounds; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
  • Conference_Location
    S. Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-2194-7
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2008.4796102
  • Filename
    4796102