Characteristics of two stimulated emission peaks in InGaN/GaN multiple quantum well structures

Author

Chi-Chih Liao ; Shih-Wei Feng ; Yang, C.C. ; Yen-Sheng Lin ; Kung-Jen Ma ; Chang-Cheng Chuo ; Chia-Ming Lee ; Jen-Inn Chyi

Author_Institution

Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

7-12 May 2000

Firstpage

244

Lastpage

245

Abstract

Summary form only given.Indium aggregation and phase separation due to the lattice mismatch between GaN and InN lead to the formation of localized states. It was widely accepted that the photoluminescence (PL) in InGaN samples and the output from a light-emitting diode came from the recombination of localized excitons. Several stimulated emission (SE) studies have led to the conclusion that their measured stimulated emission (SE) also originated from band-filled localized states. In this paper, we report a two-peak feature of SE from InGaN-GaN quantum well samples.

Keywords

gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; stimulated emission; GaN; InGaN; InGaN-GaN quantum well samples; InGaN/GaN multiple quantum well structures; band-filled localized states; lattice mismatch; light-emitting diode; localized excitons; localized states; photoluminescence; stimulated emission; stimulated emission peaks; stimulated emission studies; two-peak feature; Absorption; Attenuation measurement; Gallium nitride; Indium; Optical polarization; Quantum well devices; Reflectivity; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906967

Filename

906967