Title :
Characteristics of two stimulated emission peaks in InGaN/GaN multiple quantum well structures
Author :
Chi-Chih Liao ; Shih-Wei Feng ; Yang, C.C. ; Yen-Sheng Lin ; Kung-Jen Ma ; Chang-Cheng Chuo ; Chia-Ming Lee ; Jen-Inn Chyi
Author_Institution :
Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given.Indium aggregation and phase separation due to the lattice mismatch between GaN and InN lead to the formation of localized states. It was widely accepted that the photoluminescence (PL) in InGaN samples and the output from a light-emitting diode came from the recombination of localized excitons. Several stimulated emission (SE) studies have led to the conclusion that their measured stimulated emission (SE) also originated from band-filled localized states. In this paper, we report a two-peak feature of SE from InGaN-GaN quantum well samples.
Keywords :
gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; stimulated emission; GaN; InGaN; InGaN-GaN quantum well samples; InGaN/GaN multiple quantum well structures; band-filled localized states; lattice mismatch; light-emitting diode; localized excitons; localized states; photoluminescence; stimulated emission; stimulated emission peaks; stimulated emission studies; two-peak feature; Absorption; Attenuation measurement; Gallium nitride; Indium; Optical polarization; Quantum well devices; Reflectivity; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906967
