Relaxation phenomenon during electromigration under pulsed current

Author

Hinode, Kenji ; Furusawa, Takeshi ; Homma, Yoshio

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

205

Lastpage

210

Abstract

Relaxation in electromigration is one of the most important factors which determine the lifetime of a conductor carrying a pulsed current. The purpose was to clarify the mechanism of this relaxation. During low-frequency (DC to mHz) pulse-migration tests, an extremely slow relaxation was detected in Al conductor resistances after pulse-on and pulse-off. Conductor lifetime dependence on the pulse frequency revealed that this relaxation phenomenon corresponds to the recovery of migration damage. The very slow rate of the relaxation suggests that the resistance changes are caused by processes such as long-distance grain boundary diffusion.<>

Keywords

VLSI; aluminium; electromigration; failure analysis; metallisation; stress relaxation; 0 to 5E-3 Hz; Al conductor; VLSI; electromigration; long-distance grain boundary diffusion; low-frequency; pulse frequency; pulse-migration tests; pulsed current; recovery of migration damage; relaxation phenomenon; resistance changes; slow relaxation; Artificial intelligence; Conductors; Current density; Current measurement; Electrical resistance measurement; Electromigration; Frequency; Pulse measurements; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187647

Filename

187647