Title :
Relaxation phenomenon during electromigration under pulsed current
Author :
Hinode, Kenji ; Furusawa, Takeshi ; Homma, Yoshio
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
March 31 1992-April 2 1992
Abstract :
Relaxation in electromigration is one of the most important factors which determine the lifetime of a conductor carrying a pulsed current. The purpose was to clarify the mechanism of this relaxation. During low-frequency (DC to mHz) pulse-migration tests, an extremely slow relaxation was detected in Al conductor resistances after pulse-on and pulse-off. Conductor lifetime dependence on the pulse frequency revealed that this relaxation phenomenon corresponds to the recovery of migration damage. The very slow rate of the relaxation suggests that the resistance changes are caused by processes such as long-distance grain boundary diffusion.<>
Keywords :
VLSI; aluminium; electromigration; failure analysis; metallisation; stress relaxation; 0 to 5E-3 Hz; Al conductor; VLSI; electromigration; long-distance grain boundary diffusion; low-frequency; pulse frequency; pulse-migration tests; pulsed current; recovery of migration damage; relaxation phenomenon; resistance changes; slow relaxation; Artificial intelligence; Conductors; Current density; Current measurement; Electrical resistance measurement; Electromigration; Frequency; Pulse measurements; Stress; Temperature;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187647
