Title :
Increase in electromigration resistance by enhancing backflow effect
Author :
Li, X.X. ; Zhang, W. ; Ji, Y. ; Wang, Z. ; Cheng, Y.H. ; Gao, G.B.
Author_Institution :
Reliability Phys. Lab., Beijing Polytech. Univ., China
fDate :
March 31 1992-April 2 1992
Abstract :
The backflow effect on electromigration has been studied in terms of experiment and theory. The difference of electromigration resistance between the two materials Al-2%Cu/Ti and the stress gradient caused by a discontinuous SiO/sub 2/ overcoating layer were used to enhance the backflow intentionally to restrain the electromigration and improve the lifetime of metallization. A theoretical model is proposed to explain the formation of backflow.<>
Keywords :
VLSI; aluminium alloys; copper alloys; electromigration; metallisation; reliability; titanium; Al-Cu alloys; AlCu-Ti; SiO/sub 2/ overcoating; backflow effect; electromigration resistance; lifetime; metallization; model; stress gradient; Crystallization; Current density; Electromigration; Grain size; Inorganic materials; Metallization; Physics; Stress; Temperature; Transistors;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187648
