Mapping piezoelectric field distribution in InGaN/GaN multiple-quantum-wells by scanning second-harmonic-generation microscopy

Author

Shih-Wei Chu ; Chi-Kuang Sun ; Shi-Peng Tai ; Abare, A. ; DenBaars, S.P.

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

7-12 May 2000

Firstpage

246

Lastpage

247

Abstract

Summary form only given.III-V nitrides are key materials for optoelectronics operating in the green-ultraviolet (UV) wavelength range. The optical behaviors of the InGaN MQWs were found to be strongly shaped by the large piezoelectric field on the order of 1 MV/cm through the quantum confined Stark effect and the quantum confined Franz-Keldysh effect. In this presentation, we demonstrate the mapping of the piezoelectric field intensity in InGaN-GaN MQWs with high resolution scanning second-harmonic-generation (SHG) microscopy.

Keywords

III-V semiconductors; gallium compounds; indium compounds; optical harmonic generation; optical microscopy; piezoelectricity; semiconductor quantum wells; InGaN MQWs; InGaN-GaN; InGaN-GaN MQWs; InGaN/GaN multiple-quantum-wells; high resolution scanning SHG microscopy; large piezoelectric field; optical behaviors; piezoelectric field distribution; piezoelectric field intensity; quantum confined Franz-Keldysh effect; quantum confined Stark effect; scanning second-harmonic-generation microscopy; Filters; Gallium nitride; Ink; Large Hadron Collider; Microscopy; Optical materials; Quantum well devices; Solids; Sun; Telescopes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906970

Filename

906970