Dislocation based mechanisms in electromigration

Author

Livesay, B.R. ; Donlin, N.E. ; Garrison, A.K. ; Harris, H.M. ; Hubbard, J.L.

Author_Institution

Manuf. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

217

Lastpage

227

Abstract

The role of dislocation dynamics in electromigration degradation is presented based on both theoretical models and experimental data. Interactions between high current densities and dislocations were studied using micromechanics measurements, in situ scanning electron microscopy, and transmission electron microscopy, microstructural studies and calculations of dislocation interaction phenomena. Correlations between thin-film strengthening, electroplasticity, dislocation observations, and the crystallography of whiskers are presented.<>

Keywords

dislocations; electromigration; electron diffraction examination of materials; failure analysis; metallisation; reliability; scanning electron microscope examination of materials; transmission electron microscope examination of materials; calculations; crystallography; dislocation based mechanisms; dislocation dynamics; dislocation interaction phenomena; dislocation observations; dislocations; electromigration degradation; electroplasticity; experimental data; high current densities; in situ SEM; in situ TEM; micromechanics measurements; microstructural studies; models; scanning electron microscopy; thin-film strengthening; transmission electron microscopy; whiskers; Atomic measurements; Conductive films; Crystal microstructure; Crystalline materials; Crystallization; Current density; Degradation; Electromigration; Grain boundaries; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187649

Filename

187649