Oxidation enhanced optical response on gallium nitride

Author

Peng, L.-H. ; Hsu, Y.-C. ; Liao, C.-H. ; Hsu, K.-T. ; Jong, C.-S. ; Huang, C.-N. ; Ho, J.-K. ; Chiu, C.-C. ; Chen, C.-Y.

Author_Institution

Inst. of Electro Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

7-12 May 2000

Firstpage

248

Lastpage

249

Abstract

Summary form only given.The wide bandgap III-V nitrides have been long recognized as a material system of outstanding opto-electronic properties compared with those of group IV and II-VI materials. Although much attention has been emphasized on the device application, little has been devoted to the issues of surface passivation on GaN. We report a UV-enhanced, reaction-rate limited wet oxidation process on GaN at room temperature. A high peak oxidation rate can be achieved.

Keywords

III-V semiconductors; gallium compounds; oxidation; passivation; photoluminescence; GaN; UV-enhanced reaction-rate limited wet oxidation process; device application; enhanced optical response; gallium nitride; high peak oxidation rate; opto-electronic properties; room temperature; surface passivation; wide bandgap III-V nitrides; Cameras; Degradation; Doping; Gallium nitride; III-V semiconductor materials; Material properties; Oxidation; Petroleum; Silicon; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906972

Filename

906972