DocumentCode :
2922706
Title :
The statistical distribution of 1/f/sup 2/ noise in thin metal films under accelerated electromigration test conditions
Author :
Head, Linda M. ; Le, Bao ; Chen, Charles T M ; Swiatkowski, Joseph
Author_Institution :
Watson Sch., State Univ. of New York, Binghampton, NY, USA
fYear :
1992
fDate :
March 31 1992-April 2 1992
Firstpage :
228
Lastpage :
231
Abstract :
The levels of excess current noise in metal thin films under accelerated stress conditions have been shown to correlate well with traditional electromigration lifetimes determined from median time to failure (MTF) tests. The goals of this study were to obtain the magnitudes of a series of noise measurements taken on a metal-thin-film stripe or a set of metal-thin-film stripes where the activation energies for the noise generation processes could be assumed to be normally distributed. The values obtained from the noise measurements were determined, and the statistical distribution of the reciprocals of these values was examined. In particular, an attempt was made to determine the goodness´ of fit between the 1f//sup 2/ noise measurement data and the theoretical lognormal distribution. It is shown that the reciprocal of the 1/f/sup 2/ noise magnitudes, taken at a single frequency, for a large group of identical films can also be modeled by the lognormal distribution.<>
Keywords :
VLSI; electromigration; life testing; metallic thin films; metallisation; random noise; accelerated electromigration test conditions; accelerated stress conditions; activation energies; electromigration lifetimes; excess current noise; median time to failure; metal thin films; metal-thin-film stripes; noise generation processes; noise measurement data; statistical distribution; theoretical lognormal distribution; thin metal films; Electromigration; Frequency; Life estimation; Life testing; Noise generators; Noise level; Noise measurement; Statistical distributions; Stress; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
Type :
conf
DOI :
10.1109/RELPHY.1992.187650
Filename :
187650
Link To Document :
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