DocumentCode :
2922750
Title :
Impact of Mobile Charge on Matching Sensitivity in SOI Analog Circuits
Author :
Connell, M. ; Grady, M. ; Oldiges, P. ; Onsongo, D. ; Passaro, M. ; Rausch, W. ; Ronsheim, P. ; Siljenberg, D.
Author_Institution :
All of IBM Global Eng. Solutions, Rochester
fYear :
2007
fDate :
11-12 June 2007
Firstpage :
139
Lastpage :
142
Abstract :
Elements such as sodium and potassium can contaminate oxides in semiconductor devices, including buried oxides in Silicon-On-Insulator (SOI) devices. Common fabrication processes use chemicals which contain such contaminants - an example being chemical-mechanical polish slurries - which can contain high levels of sodium or potassium. When charge contamination, particularly mobile charge contamination, gets under SOI devices, it can shift characteristics such as threshold voltage, and when this happens in sensitive analog circuits, it can lead to yield and reliability issues. We will describe an example and suggest possible layout mitigation strategies.
Keywords :
analogue circuits; silicon-on-insulator; SOI analog circuits; fabrication processes; matching sensitivity; mobile charge; silicon-on-insulator; Analog circuits; Capacitance; Chemical processes; Contamination; Fabrication; Integrated circuit interconnections; Mirrors; Potential well; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
Type :
conf
DOI :
10.1109/ASMC.2007.375101
Filename :
4259267
Link To Document :
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