DocumentCode
2922803
Title
2.1- µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant
Author
Sato, T. ; Mitsuhara, M. ; Watanabe, T. ; Kasaya, K. ; Kondo, Y.
Author_Institution
NTT Photonics Laboratories, Japan, tomosato@aecl.ntt.co.jp
fYear
2005
fDate
14-14 July 2005
Firstpage
632
Lastpage
633
Abstract
Sb surfactant suppresses three-dimensional growth of highly strained InGaAs wells on InP substrate. The emission wavelength exceeds 2.1 µm for a buried-heterostructure laser with an active region using InGaAs wells.
Keywords
Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Laser modes; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Semiconductor films; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Conference_Location
Tokyo, Japan
Print_ISBN
0-7803-9242-6
Type
conf
DOI
10.1109/CLEOPR.2005.1569530
Filename
1569530
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