Title :
2.1- µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant
Author :
Sato, T. ; Mitsuhara, M. ; Watanabe, T. ; Kasaya, K. ; Kondo, Y.
Author_Institution :
NTT Photonics Laboratories, Japan, tomosato@aecl.ntt.co.jp
Abstract :
Sb surfactant suppresses three-dimensional growth of highly strained InGaAs wells on InP substrate. The emission wavelength exceeds 2.1 µm for a buried-heterostructure laser with an active region using InGaAs wells.
Keywords :
Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Laser modes; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Semiconductor films; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Conference_Location :
Tokyo, Japan
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569530
