Power amplifiers in 0.13 μm CMOS for DECT: a comparison between two different architectures

Author

Zimmermann, Niklas ; Johansson, Ted ; Heinen, Stefan

Author_Institution

RWTH Aachen Univ., Aachen

fYear

2007

fDate

9-11 Dec. 2007

Firstpage

333

Lastpage

336

Abstract

Two 1.9 GHz power amplifiers (PAs) have been designed and fabricated in a 0.13 μm standard CMOS process. They are both two-stage push-pull amplifiers with more than 27dBm output power. The amplifier stages of both PAs have exactly the same transistor structures and sizes, but the input and interstage matching networks are realized differently. The first PA uses on-chip transformers for the coupling of the stages, the second PA LC matching networks. In this paper both topologies are compared and benefits and drawbacks of the different structures are discussed.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; cordless telephone systems; differential amplifiers; impedance matching; CMOS process; DECT; LC matching networks; frequency 1.9 GHz; on-chip transformers; power amplifiers; size 1.3 μm; two-stage push-pull amplifiers; CMOS analog integrated circuits; CMOS technology; Differential amplifiers; Impedance matching; Integrated circuit technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transceivers; Baluns; CMOS analog integrated circuits; impedance matching; power amplifiers; transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on

Conference_Location

Rasa Sentosa Resort

Print_ISBN

978-1-4244-1307-2

Electronic_ISBN

978-1-4244-1308-9

Type

conf

DOI

10.1109/RFIT.2007.4443983

Filename

4443983