A Wideband CMOS Variable Gain Amplifier with a Novel Linear-in-dB Gain Control Structure

Author

Li, Zhiqun ; Guo, Feng ; Chen, Dongdong ; Li, Haisong ; Wang, Zhigong

Author_Institution

Southeast Univ., Nanjing

fYear

2007

fDate

9-11 Dec. 2007

Firstpage

337

Lastpage

340

Abstract

In this paper, a novel structure of linear-in-dB gain control is introduced. Based on this structure, a wideband variable gain amplifier has been designed and implemented in TSMC 0.18-mum RF CMOS process. On-chip measured results show a good linear-in-dB gain control characteristic with 12.8 dB dynamic gain range of -3.3~9.5 dB. It can operate in the frequency range of 43~2330 MHz and consumes 16.2 mW at 1.8 V supply. The noise figure is 6.2 dB at maximum gain and the input P_1dB at minimum gain is -9 dBm.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; VHF amplifiers; wideband amplifiers; RF CMOS process; frequency 430 MHz to 2330 MHz; gain -3.3 dB to 9.5 dB; linear-in-dB gain control; noise figure 6.2 dB; power 16.2 mW; size 0.18 mum; voltage 1.8 V; wideband CMOS variable gain amplifier; Broadband amplifiers; Circuit topology; Control systems; Gain control; Noise figure; Radio frequency; Radiofrequency amplifiers; Signal processing; Voltage control; Wideband; CMOS; VGA; linear-in-dB; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on

Conference_Location

Rasa Sentosa Resort

Print_ISBN

978-1-4244-1307-2

Electronic_ISBN

978-1-4244-1308-9

Type

conf

DOI

10.1109/RFIT.2007.4443984

Filename

4443984