Title :
Rapid localization of IC open conductors using charge-induced voltage alteration (CIVA)
Author :
Cole, Edward L., Jr. ; Anderson, Richard E.
Author_Institution :
Sandia Nat. Lab., Albuquerque,, NM, USA
fDate :
March 31 1992-April 2 1992
Abstract :
Charge-induced voltage alteration (CIVA) is a new scanning electron microscopy technique developed to localize open conductors, on both passivated and depassivated ICs. CIVA overcomes the limitations usually encountered in localizing open conductors. CIVA images are produced by monitoring the voltage fluctuations of a constant current power, supply as an electron beam is scanned over the IC surface. Contrast variations in the CIVA images are generated only from the electrically open portion of a conductor. Because of this high selectivity, CIVA facilitates localization of open interconnections on an entire IC in a single, unprocessed image. The equipment needed to implement CIVA and examples of applying the technique to several failed CMOS ICs are described. Possible irradiation effects and methods to minimize them are also discussed.<>
Keywords :
CMOS integrated circuits; VLSI; electron beam testing; failure analysis; fault location; inspection; integrated circuit testing; scanning electron microscopy; CIVA; CIVA images; CMOS; IC inspection; IC open conductors; SEM; charge-induced voltage alteration; constant current power; depassivated ICs; electron beam charging; entire IC; fault location; high selectivity; irradiation effects; localize open conductors; open circuits detection; passivated ICs; scanning electron microscopy technique; unprocessed image; voltage contrast microscopy; voltage fluctuations; Conductors; Electromigration; Electron beams; Failure analysis; Image generation; Monitoring; Power supplies; Scanning electron microscopy; Stress; Voltage;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187659
