Lateral Extended Drain Transistor Reliability Dependence on Lithography CD Variation

Developing reliable high voltage transistors requires consistent manufacturing of critical architectural parameters within the device over time and with various design configurations. Structural parameters that directly affect reliability are especially crucial to delivering robust parts to the market place. In this paper it will be shown that the nwell and pwell photo critical dimension (CD)´s for a lateral field n-type transistor (LFNDMOS), are significant control parameters for minimizing hot-carrier degradation and thus, improving the reliability. By understanding these critical structural parameters a more reliable manufacturing process can be developed, which can ensure that as the device is transitioned from development to production these critical parameters are stable over time, wafer volume, and part types.