DocumentCode
2922933
Title
Copper Metallization for Power Devices
Author
Rob, W. ; Melz, M. ; Weidgans, B. ; Hofmann, R. ; Stecher, M.
Author_Institution
Infineon Technol. AG, Regensburg
fYear
2007
fDate
11-12 June 2007
Firstpage
259
Lastpage
262
Abstract
High ampacity and low resistivity are key parameters for power devices. In this paper a copper based metallization scheme is described, which improves these properties. The method of choice for depositing thick copper wires is pattern plating. However the plating process has to be optimized in order to get a homogeneous thickness distribution.
Keywords
copper; electroplating; power semiconductor devices; semiconductor device metallisation; copper metallization; homogeneous thickness distribution; metallization scheme; plating process; power devices; thick copper wires; Additives; Aluminum; Copper; Metallization; Passivation; Resists; Silicon; Sputter etching; Thermal conductivity; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location
Stresa
Print_ISBN
1-4244-0652-8
Electronic_ISBN
1-4244-0653-6
Type
conf
DOI
10.1109/ASMC.2007.375112
Filename
4259278
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