Title :
Copper Metallization for Power Devices
Author :
Rob, W. ; Melz, M. ; Weidgans, B. ; Hofmann, R. ; Stecher, M.
Author_Institution :
Infineon Technol. AG, Regensburg
Abstract :
High ampacity and low resistivity are key parameters for power devices. In this paper a copper based metallization scheme is described, which improves these properties. The method of choice for depositing thick copper wires is pattern plating. However the plating process has to be optimized in order to get a homogeneous thickness distribution.
Keywords :
copper; electroplating; power semiconductor devices; semiconductor device metallisation; copper metallization; homogeneous thickness distribution; metallization scheme; plating process; power devices; thick copper wires; Additives; Aluminum; Copper; Metallization; Passivation; Resists; Silicon; Sputter etching; Thermal conductivity; Wiring;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
DOI :
10.1109/ASMC.2007.375112
