Title :
Cu Annealing Using Various Concentrations of Hydrogen in a Flexible Hot-Wall Thermal Processing Tool
Author :
Ouaknine, Michel ; Ueda, Takeshi ; Fukada, Takashi ; Malik, Igor J. ; Yoo, Woo Sik ; Guerrieri, Stefano ; Marangon, T.
Author_Institution :
WaferMasters, Inc., San Jose
Abstract :
The importance of stabilizing deposited Cu layers through annealing is discussed. We describe wafer processing in a hot wall annealing tool using inert (nitrogen) and reducing (hydrogen added to nitrogen) ambient.
Keywords :
annealing; coating techniques; copper; hot working; hydrogen; integrated circuit interconnections; wafer-scale integration; Cu; copper annealing; electro-chemical deposition; flexible hot-wall thermal processing tool; hydrogen concentration; wafer processing; Annealing; Hydrogen; Semiconductor device manufacture;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
DOI :
10.1109/ASMC.2007.375113