DocumentCode
2922946
Title
Cu Annealing Using Various Concentrations of Hydrogen in a Flexible Hot-Wall Thermal Processing Tool
Author
Ouaknine, Michel ; Ueda, Takeshi ; Fukada, Takashi ; Malik, Igor J. ; Yoo, Woo Sik ; Guerrieri, Stefano ; Marangon, T.
Author_Institution
WaferMasters, Inc., San Jose
fYear
2007
fDate
11-12 June 2007
Firstpage
263
Lastpage
267
Abstract
The importance of stabilizing deposited Cu layers through annealing is discussed. We describe wafer processing in a hot wall annealing tool using inert (nitrogen) and reducing (hydrogen added to nitrogen) ambient.
Keywords
annealing; coating techniques; copper; hot working; hydrogen; integrated circuit interconnections; wafer-scale integration; Cu; copper annealing; electro-chemical deposition; flexible hot-wall thermal processing tool; hydrogen concentration; wafer processing; Annealing; Hydrogen; Semiconductor device manufacture;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location
Stresa
Print_ISBN
1-4244-0652-8
Electronic_ISBN
1-4244-0653-6
Type
conf
DOI
10.1109/ASMC.2007.375113
Filename
4259279
Link To Document