Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Author

Huffaker, D.L. ; EL-Emawy, A.R. ; Birudavolu, S. ; Wong, P.S. ; Xu, H. ; Ukhanov, A. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

614

Abstract

Summary form only given. We demonstrate 1.3 μm electroluminescence from a QD ensemble, MOCVD-grown on an n-GaAs substrate. We discuss optimized QD growth using MOCVD as well as characterization of the ensembles. By optimizing key parameters including growth temperature, V/III ratio, deposition rate and system pressure, we achieve surface densities of 8×10¹⁰/cm², and electroluminescence at 1.3 μm with a full width at half maximum of 40 meV.

Keywords

III-V semiconductors; MOCVD; atomic force microscopy; electroluminescence; gallium arsenide; indium compounds; quantum dot lasers; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; 1.3 micron; AFM images; GaAs; InAs-GaAs; InAs/GaAs quantum dots; MOCVD; QD ensemble; TEM images; V/III ratio; deposition rate; electroluminescence; full width at half maximum; growth temperature; laser structure; materials characterization; metalorganic chemical vapor deposition; optimized QD growth; surface densities; system pressure; Buffer layers; Chemical vapor deposition; Electroluminescence; Gallium arsenide; Inorganic materials; MOCVD; Quantum dot lasers; Quantum dots; Temperature distribution; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159457

Filename

1159457