DocumentCode :
2922970
Title :
Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)
Author :
Benard, Christelle ; Ogier, Jean-Luc ; Goguenheim, Didier
Author_Institution :
ST Microelectronics, Rousset; CNRS, Institut Matériaux, Microélectronique et Nanosciences de Provence (IM2NP, UMR 6242)
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
0
Lastpage :
18
Keywords :
Annealing; Charge measurement; Current measurement; Density measurement; Interface states; Negative bias temperature instability; Niobium compounds; Thermal stresses; Thickness measurement; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796121
Filename :
4796121
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2922970
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