Title :
Reliability study of a GaAs MMIC amplifier
Author :
Christianson, K.A. ; Roussos, J.A. ; Anderson, W.T.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
March 31 1992-April 2 1992
Abstract :
Accelerated aging was used to investigated the reliability of a 2-18 GHz monolithic microwave integrated circuit amplifier. A mean time between failures of 2.5*10/sup 5/ h at a channel temperature of 125 degrees C was estimated from high-temperature accelerated RF lifetest results. Failure analysis revealed that degradation and burnout were caused by leakage currents at the GaAs surface/passivation-layer interface.<>
Keywords :
III-V semiconductors; MMIC; circuit reliability; integrated circuit testing; life testing; microwave amplifiers; 125 degC; 2 to 18 GHz; 2.5E5 h; GaAs; MMIC amplifier; RF lifetest results; accelerated ageing; burnout; channel temperature; degradation; leakage currents; mean time between failures; monolithic microwave integrated circuit; reliability; semiconductor surface-passivation layer; Accelerated aging; Gallium arsenide; Integrated circuit reliability; Life estimation; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency amplifiers; Temperature;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187665
