Influence of substrate orientation on self-assembled InAs/GaAs quantum dots for long wavelength emission grown by molecular beam epitaxy

Author

Saravanan, S. ; Vaccaro, P.O. ; Zanardi, J.M. ; Kubota, K. ; Aida, T.

Author_Institution

ATR Adaptive Commun. Res. Labs., Kyoto, Japan

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

616

Abstract

MBE grown self-organised InAs QDs on GaAs (100) and (n11) substrates have been investigated by AFM and PL. The results show that substrate orientations have a strong effect on the properties of QDs. The dependence of PL for different oriented substrates has been examined. It was found that, by reducing the strain and quantum confinement in InAs QDs, long-wavelength PL emission was obtained.

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum dot lasers; self-assembly; semiconductor growth; semiconductor quantum dots; AFM; GaAs; GaAs (100) substrates; GaAs (n11) substrates; InAs-GaAs; MBE growth; PL spectrum; long-wavelength PL emission; molecular beam epitaxy; quantum confinement; self-assembled InAs/GaAs quantum dots; self-organised InAs QDs; semiconductor quantum dot lasers; strain; substrate orientation; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Substrates; Surface morphology; US Department of Transportation; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159458

Filename

1159458