Title :
1.23 μm long wavelength highly strained GaInAs/GaAs quantum well laser
Author :
Kondo, Takashi ; Arai, Masakazu ; Onomura, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Fumio
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We were able to extend the emission wavelength of highly strained GaInAs/GaAs SQWs over 1.2 μm by employing a high growth rate of 9 μm/h. We obtained the longest PL peak wavelength of 1.27 μm. We also demonstrated a highly strained GaInAs/GaAs SQW stripe-laser. The lasing wavelength reached 1.23 μm with a threshold current density of 1.7 kA/cm2.
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor quantum wells; surface emitting lasers; 1.23 micron; 1.27 micron; Ga0.56In0.44As-GaAs; GaInAs/GaAs SQW stripe-laser; MOVPE; PL peak wavelength; VCSEL; emission wavelength; high growth rate; highly strained GaInAs/GaAs SQWs; highly strained GaInAs/GaAs quantum well laser; lasing wavelength; low-pressure metal-organic vapor phase epitaxy; threshold current density; Electrons; Gallium arsenide; Quantum well lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159459
