Title :
Copper line topology impact of SiOCH low-k dielectric reliability in advanced 45nm technology node and beyond
Author :
Vilmay, M. ; Roy, D. ; Monget, C. ; Volpi, F. ; Chaix, J.-M.
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet 38926 Crolles, France
Keywords :
Breakdown voltage; Copper; Dielectric breakdown; Dielectric materials; Leakage current; Materials reliability; Robustness; Shape measurement; Stress; Topology;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796123
