DocumentCode :
2923013
Title :
A 300mm Semiconductor Manufacturing Foreign Material Reduction Initiative
Author :
Long, Christopher W. ; Sienkiewicz, Thomas
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction
fYear :
2007
fDate :
11-12 June 2007
Firstpage :
288
Lastpage :
292
Abstract :
It is well established that foreign material (FM) in a semiconductor manufacturing process can result in significant unplanned tool down time, reduced product yields, and potential reliability performance issues. This paper will present an overview of the strategy and subsequent results of a multifaceted effort to reduce FM impact during the ramp up of the IBM 300 mm semiconductor manufacturing facility in Hope well Junction, NY.
Keywords :
integrated circuit reliability; integrated circuit yield; nanotechnology; process control; semiconductor device manufacture; foreign material reduction initiative; product yield enhancement; semiconductor manufacturing; size 300 nm; tool defect controls; Condition monitoring; Manufacturing processes; Materials reliability; Materials testing; Metrology; Production facilities; Rivers; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor materials; Foreign material; monitor wafer; tool defect controls; variability reduction; yield enhancement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
Type :
conf
DOI :
10.1109/ASMC.2007.375118
Filename :
4259284
Link To Document :
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