A 300mm Semiconductor Manufacturing Foreign Material Reduction Initiative

Author

Long, Christopher W. ; Sienkiewicz, Thomas

Author_Institution

IBM Syst. & Technol. Group, Essex Junction

fYear

2007

fDate

11-12 June 2007

Firstpage

288

Lastpage

292

Abstract

It is well established that foreign material (FM) in a semiconductor manufacturing process can result in significant unplanned tool down time, reduced product yields, and potential reliability performance issues. This paper will present an overview of the strategy and subsequent results of a multifaceted effort to reduce FM impact during the ramp up of the IBM 300 mm semiconductor manufacturing facility in Hope well Junction, NY.

Keywords

integrated circuit reliability; integrated circuit yield; nanotechnology; process control; semiconductor device manufacture; foreign material reduction initiative; product yield enhancement; semiconductor manufacturing; size 300 nm; tool defect controls; Condition monitoring; Manufacturing processes; Materials reliability; Materials testing; Metrology; Production facilities; Rivers; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor materials; Foreign material; monitor wafer; tool defect controls; variability reduction; yield enhancement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI

Conference_Location

Stresa

Print_ISBN

1-4244-0652-8

Electronic_ISBN

1-4244-0653-6

Type

conf

DOI

10.1109/ASMC.2007.375118

Filename

4259284