Three kinds of via electromigration failure mode in multilevel interconnections

Author

Yamaha, Takahisa ; Naitou, Masaru ; Hotta, Tadahiko

Author_Institution

Yamaha Corp., Shizuoka, Japan

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

349

Lastpage

355

Abstract

The via electromigration performance of four metallization systems has been investigated for via chains of 1500-4400 vias of 1.0 mu m diameter. AL(AL/Ti), (Al/Ti)AL, and AL/(WSi/AL) metallization systems have longer electromigration lifetime than AL/AL. The via failures have been analyzed by the contrast scanning ion microscope technique. Further failure analysis by focused ion beam milling on the opened via has revealed that at least three kinds of failure modes exist for via electromigration. Models for the failure mechanism in each metallization system are discussed.<>

Keywords

aluminium alloys; copper alloys; electromigration; failure analysis; ion microscopy; metallisation; titanium alloys; AlCuTi; contrast scanning ion microscope technique; electromigration lifetime; failure mechanism; focused ion beam milling; metallization systems; multilevel interconnections; opened via; via chains; via electromigration failure mode; Aluminum; Current density; Dry etching; Electromigration; Failure analysis; Ion beams; Metallization; Silicon; Sputter etching; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187668

Filename

187668