DocumentCode :
2923049
Title :
3-dimensional simulations of temperature and current density distribution in a via structure
Author :
Weide, K. ; Hasse, W.
Author_Institution :
Inst. fuer Halbleitertechnol. & Werkstoffe der Elektrotech., Hannover Univ., Germany
fYear :
1992
fDate :
March 31 1992-April 2 1992
Firstpage :
361
Lastpage :
365
Abstract :
The influence of geometry (overlap, step coverage, filling ratio), and filling material on temperature and current density distributions in via structures of different forms and technologies simulated with the finite element method program ANSYS was studied. Vias of square, circular, and oval forms were investigated. The influence of via filling was observed. Reduction of current crowding and self-heating effects were found for the tungsten-filled via. Critical parameters for the filling materials were determined. Local temperature and current density distributions are shown.<>
Keywords :
digital simulation; finite element analysis; metallisation; tungsten; ANSYS; current crowding; current density distribution; filling material; filling ratio; finite element method; geometry; overlap; self-heating effects; step coverage; temperature distributions; via filling; via structure; Current density; Dielectrics; Extrapolation; Filling; Integrated circuit reliability; Metallization; Proximity effect; Solid modeling; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
Type :
conf
DOI :
10.1109/RELPHY.1992.187670
Filename :
187670
Link To Document :
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