DocumentCode :
2923074
Title :
Investigation of GIDL current Injection Disturb Mechanism in two-transistor-eNVM memory devices
Author :
Kim, Sung-Rae ; Han, K.J. ; Lee, Junmin ; Lee, P.Y. ; Zhou, Tony ; Lee, Kin-Sing ; Liu, Patty ; Tseng, Huan-Chung ; Cronguist, Brian
Author_Institution :
Actel Corp., Mountain View, CA 94043-4655, USA. Phone: (650) 318-7569, Fax: (650) 318-4601 e-mail: sung-rae.kim@actel.com
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
1
Lastpage :
26
Keywords :
Contacts; Erbium; Failure analysis; Field programmable gate arrays; Logic; Nonvolatile memory; Random access memory; Routing; Switches; Table lookup;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796128
Filename :
4796128
Link To Document :
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