Title :
GaAs-AlGaAs and InGaAs-InAlAs quantum cascade lasers
Author :
Wilson, L.R. ; Keightley, P.T. ; Cockburn, J.W. ; Skolnick, M.S. ; Clark, J.C. ; Grey, R. ; Hill, G. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Sheffield Univ., UK
Abstract :
Summary form only given. We present a comprehensive, comparative study of the lasing characteristics of GaAs-AlGaAs and InGaAs-InAlAs quantum cascade (QC) lasers. At low temperature the performance of devices from both material systems is comparable. A threshold current density (J/sub th/) of 3.2 kA/cm/sup 2/ and peak power of 800 mW are measured for an optimised InGaAs-InAlAs sample (/spl lambda//spl sim/8.3 /spl mu/m) at 10 K.
Keywords :
aluminium compounds; current density; gallium arsenide; optimisation; quantum well lasers; 10 K; 800 mW; GaAs-AlGaAs; GaAs-AlGaAs quantum cascade lasers; InGaAs-InAlAs; InGaAs-InAlAs quantum cascade lasers; lasing characteristics; optimised InGaAs-InAlAs sample; peak power; threshold current density; Artificial intelligence; Current measurement; Doping; Indium compounds; Optical materials; Optical scattering; Power measurement; Quantum cascade lasers; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906996
