Title :
Effect of substrate hot carrier stress on high-k gate stack
Author :
Park, H. ; Bersuker, G. ; Kang, C.Y. ; Young, C. ; Tseng, H-H ; Jammy, R.
Author_Institution :
SEMATECH, Austin, Tx, 78741, U. S. A.
Keywords :
Annealing; Fluid flow measurement; Frequency measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFET circuits; Stress measurement; Substrate hot electron injection;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796129
